期刊
NANOSCALE RESEARCH LETTERS
卷 13, 期 -, 页码 -出版社
SPRINGEROPEN
DOI: 10.1186/s11671-018-2672-5
关键词
ZnO nanorod arrays; Graphene quantum dots; Heterojunction; UV photodetector
资金
- National Natural Science Foundation of China [51702212, 51572173, 51602197, 51771121]
- Shanghai Municipal Science and Technology Commission [15520720300, 16060502300, 16JC402200]
A novel isotype heterojunction ultraviolet photodetector was fabricated by growing n-ZnO nanorod arrays on n-GaN thin films and then spin-coated with graphene quantum dots (GQDs). Exposed to UV illumination with a wavelength of 365 nm, the time-dependent photoresponse of the hybrid detectors manifests high sensitivity and consistent transients with a rise time of 100 ms and a decay time of 120 ms. Meanwhile, an ultra-high specific detectivity (up to similar to 10(12) Jones) and high photoresponsivity (up to 34 mA W-1) are obtained at 10 V bias. Compared to the bare heterojunction detectors, the excellent performance of the GQDs decorated n-ZnO/n-GaN heterostructure is attributed to the efficient immobilization of GQDs on the ZnO nanorod arrays. GQDs were exploited as a light absorber and act like an electron donor to effectively improve the effective carrier concentration in interfacial junction. Moreover, appropriate energy band alignment in GQDs decorated ZnO/GaN hybrids can also be a potential factor in facilitating the UV-induced photocurrent and response speed.
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