期刊
NANOSCALE RESEARCH LETTERS
卷 5, 期 8, 页码 1333-1339出版社
SPRINGEROPEN
DOI: 10.1007/s11671-010-9649-3
关键词
Zinc oxide; Semiconducting II-VI materials; Nanowires; Chemical vapor deposition; Low temperature; Transparent oxide
资金
- NIH-NINDS Center [5P30NS047463-02]
Zinc oxide nanowires have been synthesized without using metal catalyst seed layers on fluorine-doped tin oxide (FTO) substrates by a modified vapor phase transport deposition process using a double-tube reactor. The unique reactor configuration creates a Zn-rich vapor environment that facilitates formation and growth of zinc oxide nanoparticles and wires (20-80 nm in diameter, up to 6 mu m in length, density < 40 nm apart) at substrate temperatures down to 300A degrees C. Electron microscopy and other characterization techniques show nanowires with distinct morphologies when grown under different conditions. The effect of reaction parameters including reaction time, temperature, and carrier gas flow rate on the size, morphology, crystalline structure, and density of ZnO nanowires has been investigated. The nanowires grown by this method have a diameter, length, and density appropriate for use in fabricating hybrid polymer/metal oxide nanostructure solar cells. For example, it is preferable to have nanowires no more than 40 nm apart to minimize exciton recombination in polymer solar cells.
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