期刊
NANOSCALE RESEARCH LETTERS
卷 6, 期 -, 页码 -出版社
SPRINGER
DOI: 10.1007/s11671-010-9789-5
关键词
-
资金
- MKE/KEIT [10030559]
- Industry and Energy, the Nano RD Program [M10703000980-08M0300-98010]
- World Class University (WCU) [R32-2008-000-10082-0]
- Ministry of Education, Science and Technology (Korea Science and Engineering Foundation)
Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm(2)/V.s and their on/off ratio was in the range of 10(4)-10(5). The threshold voltages of the programmed and erased states were negligibly changed up to 10(3) cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据