期刊
NANOSCALE RESEARCH LETTERS
卷 4, 期 12, 页码 1421-1427出版社
SPRINGEROPEN
DOI: 10.1007/s11671-009-9414-7
关键词
Persistent photoconductivity; Semiconducting II-VI materials; Zinc oxide; UV sensor; Nanoscale device
资金
- U.S. Defense Micro Electronic Activity (DMEA)
- U.S. Defense Advanced Research Projects Agency (DARPA) at University of Alaska, Fairbanks
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0803276] Funding Source: National Science Foundation
The phenomenon of persistent photoconductivity is elusive and has not been addressed to an extent to attract attention both in micro and nanoscale devices due to unavailability of clear material systems and device configurations capable of providing comprehensive information. In this work, we have employed a nanostructured (nanowire diameter 30-65 nm and 5 mu m in length) ZnO-based metal-semiconductor-metal photoconductor device in order to study the origin of persistent photoconductivity. The current-voltage measurements were carried with and without UV illumination under different oxygen levels. The photoresponse measurements indicated a persistent conductivity trend for depleted oxygen conditions. The persistent conductivity phenomenon is explained on the theoretical model that proposes the change of a neutral anion vacancy to a charged state.
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