期刊
NANOSCALE
卷 10, 期 12, 页码 5559-5565出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7nr09438h
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资金
- National Key Research and Development Program of China [2016YFB0400802]
- National Natural Science Foundation of China [61674137, 61474105]
- [17-163-13-ZD-00100302]
Hexagonal boron nitride (h-BN), an isomorph of graphene, has attracted great attention owing to its potential applications as an ultra-flat substrate or gate dielectric layer in novel graphene-based devices. Besides, h-BN appears to be a promising material for deep ultraviolet (DUV) optoelectronic applications because of its extraordinary physical properties, such as wide band gap and high absorption coefficient. In this work, two-dimensional h-BN with controllable layers was synthesized on Cu foils by ion beam sputtering deposition, and DUV photodetectors were fabricated from the transferred h-BN layers on SiO2/Si substrates. The h-BN layers synthesized at the higher substrate temperature possess a lower density of domain boundaries and higher crystalline quality, and the photodetectors based on a 3 nm h-BN layer exhibited high performance with an on/off ratio of >10(3) under DUV light illumination at 212 nm and a cutoff wavelength at around 225 nm. This work demonstrates that two-dimensional h-BN layers are promising for the construction of high-performance solar-blind photodetectors.
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