期刊
NANOSCALE
卷 10, 期 19, 页码 9212-9217出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8nr00158h
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资金
- National Natural Science Foundation of China [61504010, 61774021, 61674020]
- Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), P. R. China [IPOC2017ZT02, IPOC2017ZZ01]
A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 mu s at zero bias. Under AM 15 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm(-2), yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.
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