相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors
Kai Xu et al.
NANO LETTERS (2017)
Various and Tunable Transport Properties of WSe2 Transistor Formed by Metal Contacts
Chunsen Liu et al.
SMALL (2017)
Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating
Xudong Wang et al.
NPJ 2D MATERIALS AND APPLICATIONS (2017)
Ferroelectric-induced carrier modulation for ambipolar transition metal dichalcogenide transistors
Lei Yin et al.
APPLIED PHYSICS LETTERS (2017)
Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer
Yan Chen et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
High-Performance Ferroelectric Polymer Side-Gated CdS Nanowire Ultraviolet Photodetectors
Dingshan Zheng et al.
ADVANCED FUNCTIONAL MATERIALS (2016)
Carrier Type Control of WSe2 Field-Effect Transistors by Thickness Modulation and MoO3 Layer Doping
Changjian Zhou et al.
ADVANCED FUNCTIONAL MATERIALS (2016)
Electrical characteristics of MoS2 field-effect transistor with ferroelectric vinylidene fluoride-trifluoroethylene copolymer gate structure
Takuhei Kobayashi et al.
APPLIED PHYSICS LETTERS (2016)
MoS2 transistors with 1-nanometer gate lengths
Sujay B. Desai et al.
SCIENCE (2016)
Toward High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering
Kai Xu et al.
SMALL (2016)
Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer
Young Tack Lee et al.
ACS NANO (2015)
High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors
Hema C. P. Movva et al.
ACS NANO (2015)
Controllable Nondegenerate p-Type Doping of Tungsten Diselenide by Octadecyltrichlorosilane
Dong-Ho Kang et al.
ACS NANO (2015)
Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics
Xudong Wang et al.
ADVANCED MATERIALS (2015)
End-bonded contacts for carbon nanotube transistors with low, size-independent resistance
Qing Cao et al.
SCIENCE (2015)
High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering
David J. Perello et al.
NATURE COMMUNICATIONS (2015)
Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors
N. R. Pradhan et al.
SCIENTIFIC REPORTS (2015)
Field-Effect Transistors Based on Few-Layered α-MoTe2
Nihar R. Pradhan et al.
ACS NANO (2014)
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
Han Liu et al.
ACS NANO (2014)
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Deep Jariwala et al.
ACS NANO (2014)
Black phosphorus field-effect transistors
Likai Li et al.
NATURE NANOTECHNOLOGY (2014)
Hole mobility enhancement and p-doping in monolayer WSe2 by gold decoration
Chang-Hsiao Chen et al.
2D MATERIALS (2014)
Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
Weijie Zhao et al.
ACS NANO (2013)
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
Cheng Gong et al.
APPLIED PHYSICS LETTERS (2013)
Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing
Deep Jariwala et al.
CHEMICAL SOCIETY REVIEWS (2013)
High Performance Multilayer MoS2 Transistors with Scandium Contacts
Saptarshi Das et al.
NANO LETTERS (2013)
Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
Wei Liu et al.
NANO LETTERS (2013)
Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2
Weijie Zhao et al.
NANOSCALE (2013)
Mobility engineering and a metal-insulator transition in monolayer MoS2
Branimir Radisavljevic et al.
NATURE MATERIALS (2013)
Anomalous Raman spectra and thickness-dependent electronic properties of WSe2
H. Sahin et al.
PHYSICAL REVIEW B (2013)
Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2 from first principles
Kristen Kaasbjerg et al.
PHYSICAL REVIEW B (2013)
Solution Processable Low-Voltage Organic Thin Film Transistors with High-k Relaxor Ferroelectric Polymer as Gate Insulator
Jinhua Li et al.
ADVANCED MATERIALS (2012)
Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer
Yang Chai et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
Hui Fang et al.
NANO LETTERS (2012)
Phonon-limited mobility in n-type single-layer MoS2 from first principles
Kristen Kaasbjerg et al.
PHYSICAL REVIEW B (2012)
Single-layer MoS2 transistors
B. Radisavljevic et al.
NATURE NANOTECHNOLOGY (2011)
First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers
Yi Ding et al.
PHYSICA B-CONDENSED MATTER (2011)
Hysteresis of Electronic Transport in Graphene Transistors
Haomin Wang et al.
ACS NANO (2010)
Graphene transistors
Frank Schwierz
NATURE NANOTECHNOLOGY (2010)
Atomically Thin MoS2: A New Direct-Gap Semiconductor
Kin Fai Mak et al.
PHYSICAL REVIEW LETTERS (2010)
The electronic properties of graphene
A. H. Castro Neto et al.
REVIEWS OF MODERN PHYSICS (2009)
High electric tunability of relaxor ferroelectric Langmuir-Blodgett terpolymer films
J. L. Wang et al.
APPLIED PHYSICS LETTERS (2008)
A dielectric polymer with high electric energy density and fast discharge speed
Baojin Chu et al.
SCIENCE (2006)
Influence of composition on relaxor ferroelectric and electromechanical properties of poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene)
RJ Klein et al.
JOURNAL OF APPLIED PHYSICS (2005)
High-mobility field-effect transistors based on transition metal dichalcogenides
V Podzorov et al.
APPLIED PHYSICS LETTERS (2004)
Electric field effect in atomically thin carbon films
KS Novoselov et al.
SCIENCE (2004)
Ferroelectric and electromechanical properties of poly(vinylidene-fluoride-trifluoroethylene-chlorotrifluoroethylene) terpolymer
HS Xu et al.
APPLIED PHYSICS LETTERS (2001)
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
XF Duan et al.
NATURE (2001)
分享论文
