期刊
NANOSCALE
卷 6, 期 10, 页码 5323-5328出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4nr00693c
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资金
- National Natural Science Foundation of China [61106098, 61066004, U1037604]
- Research Grants Council of Hong Kong [PolyU 5006/12P]
- HK PolyU grants [G-YJ70, 1-ZV8N]
- Key Project of Applied Basic Research of Yunnan Province [2012FA003]
Sulphur-doped carbon-based materials have attracted a great deal of interest because of their important applications in the fields of oxygen reduction reactions, hydrogen storage, supercapacitors, photocatalysts and lithium ion batteries. Here, we report a new member of sulphur-doped carbon-based materials, i e. sulphur doped graphene quantum dots (S-GQDs). The S-GQDs were prepared by a hydrothermal method using fructose and sulphuric acid as source materials. Absorption and photoluminescence investigations show that inter-band crossings are responsible for the observed multiple emission peaks. The incorporation of similar to 1 at% of S into the quantum dots can effectively modify the electronic structure of the S-GQDs by introducing S-related energy levels between pi and pi* of C. The additional energy levels in the S-GQDs lead to efficient and multiple emission peaks.
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