期刊
NANOSCALE
卷 6, 期 19, 页码 11232-11239出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4nr03170a
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资金
- DST, Government of India
- DST GPU project at IIT Kharagpur
- J.C.Bose Fellowship
We report the fabrication and optical response of boron-doped single silicon nanowire-based metal-semiconductor-metal photodetector. Typical single nanowire devices with diameter of similar to 80-100 nm and electrode spacing of similar to 1 mu m were made using electron-beam lithography from nanowires, grown by a metal-assisted chemical etching process. A high responsivity, of the order of 10(4) A W-1, was observed even at zero bias in a single nanowire photodetector with peak responsivity in the near-infrared region. The responsivity was found to increase with increasing bias and decreasing nanowire diameter. Finite element based optical simulation was proposed to explain the diameter dependent performance of a single nanowire. The observed photoresponse is sensitive to the polarization of exciting light source, allowing the device to act as a polarization-dependent near-infrared photodetector.
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