期刊
NANOSCALE
卷 6, 期 11, 页码 5698-5702出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4nr00500g
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资金
- Stanford Non-Volatile Memory Technology Research Initiative (NMTRI)
- Intel Fellowship
- Taiwanese Government Scholarship to Study Aboard (GSSA)
- Taiwanese Government Graduate Student Study Abroad Program (GSSAP)
- M. Stanley Rundel Fellowship Fund at Stanford University
- Stanford Graduate Fellowship
Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO2 ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.
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