期刊
NANOSCALE
卷 5, 期 12, 页码 5283-5287出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3nr00387f
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- Natural Sciences and Engineering Research Council of Canada
- McGill University
The catalyst-free molecular beam epitaxial growth of GaN nanowires and their heterostructures on a SiOx template is studied in detail. It was found that by optimizing the growth temperature, highly uniform and vertically aligned GaN nanowires and InGaN/GaN heterostructures with excellent optical properties can be obtained on a SiOx template in a large-scale. This work provides an entirely new avenue for GaN nanowire based optoelectronic devices.
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