期刊
NANOSCALE
卷 5, 期 7, 页码 2857-2863出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3nr33584d
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资金
- Key Project of Chinese National Programs for Fundamental Research and Development [2010CB631002]
- National Natural Science Foundation of China [51171145, 50901057]
- National Ministries and Commissions [6139802-04]
- New Century Excellent Talents in University and Fundamental Research Funds for the Central Universities
- Scientific Research Fund of Zhejiang Provincial Education Department [Z200906194]
- Science and Technology Innovative Research Team of Zhejiang Province [2009R50010]
Doping nanostructures is an effective method to tune their electrical and photoelectric properties. Taking ZnO nanowires (NWs) as a model system, we demonstrate that atomic layer deposition (ALD) can be adopted for the realization of a doping process by the homo-epitaxial growth of a doped shell on the NW core. The Al-doped ZnO NWs have a layered superlattice structure with dopants mainly occupying the interstitial positions. After annealing, Al3+ ions diffuse into the ZnO matrix and occupy substitutional locations, which is desirable for dopant activation. The stress accumulated during epitaxial growth is relaxed by the nucleation of dislocations, dislocation dipoles and anti-phase boundaries. We note that the proposed method can be easily adopted for doping different types of nanostructures, and fabricating superlattices and multiple quantum wells on NWs in a controllable way.
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