期刊
NANOSCALE
卷 5, 期 20, 页码 9572-9576出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3nr03220e
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资金
- FIRST Program of the JSPS
- CREST project of the JST
- Grants-in-Aid for Scientific Research [24651148, 23310096, 25107004] Funding Source: KAKEN
We present the temperature-dependent carrier mobility of atomically thin MoS2 field-effect transistors on crystalline hexagonal boron nitride (h-BN) and SiO2 substrates. Our results reveal distinct weak temperature dependence of the MoS2 devices on h-BN substrates. The room temperature mobility enhancement and reduced interface trap density of the single and bilayer MoS2 devices on h-BN substrates further indicate that reducing substrate traps is crucial for enhancing the mobility in atomically thin MoS2 devices.
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