期刊
NANOSCALE
卷 5, 期 11, 页码 4785-4789出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3nr33370a
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资金
- Ministry of Science and Technology of China [2011CBA00602, XDA06020102, 2010CB934200, 2011CB921804, 2009CB930803, 2011CB707600, 2011AA010401, 2011AA010402]
- NSFC [61221004, 60825403, 61274091, 61106119, 61106082, 60976003, 61006011]
- Fundamental Research Funds for the Central Universities [lzujbky-2012-30]
Different from conventional unipolar-type 1D-1R RRAM devices, a bipolar-type 1D-1R memory device concept is proposed and successfully demonstrated by the integration of Ni/TiOx/Ti diode and Pt/HfO2/Cu bipolar RRAM cell to suppress the undesired sneak current in a cross-point array. The bipolar 1D-1R memory device not only achieves self-compliance resistive switching characteristics by the reverse bias current of the Ni/TiOx/Ti diode, but also exhibits excellent bipolar resistive switching characteristics such as uniform switching, satisfactory data retention, and excellent scalability, which give it high potentiality for high-density integrated nonvolatile memory applications.
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