期刊
NANOSCALE
卷 5, 期 19, 页码 8940-8944出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3nr03082b
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资金
- Office of Naval Research (ONR) [ONR N00014-10-1-0937]
- National Science Foundation under NSF award [ECS-0335765]
Recently, 2-dimensional electron gas (2-DEG) was discovered at the interface of Al2O3/SrTiO3 (STO) heterostructures, in which the amorphous Al2O3 layers were grown by atomic layer deposition (ALD). The saturated electron density at the Al2O3/STO heterostructures above the critical thickness of Al2O3 is explained by an oxygen diffusion mechanism.
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