期刊
NANOSCALE
卷 5, 期 4, 页码 1483-1488出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c2nr33294a
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资金
- Priority Research Center Program [NRF-2011-0031392]
- Basic Science Research Program [NRF-2009-0083540, NRF-20090081018, NRF-2010-0010610]
- Global Frontier RD Program [2011-0031565]
- World Class University Program [R31-10029]
- TJ Park POSCO science fellowship
- National Research Foundation of Korea [2009-0094023, 2011-0031565, 2010-0010610, 2009-0081018] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report the original fabrication and performance of a photocurrent device that uses directly grown CdSe quantum dots (QDs) on a graphene basal plane. The direct junction between the QDs and graphene and the high quality of the graphene grown by chemical vapor deposition enables highly efficient electron transfer from the QDs to the graphene. Therefore, the hybrids show large photocurrent effects with a fast response time and shortened photoluminescence (PL) lifetime. The PL lifetime quenching can be explained as being due to the efficient electron transfer as evidenced by femtosecond transient absorption spectroscopy. These hybrids are expected to find applications in flexible electronics and optoelectronic devices.
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