期刊
NANOSCALE
卷 5, 期 10, 页码 4156-4161出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3nr34304a
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资金
- Natural Science Foundation of China [91123034, 61102046]
- Chinese Academy of Sciences [KJCX2-EW-M02]
- Basic Research Programme of Jiangsu Province [BK2011364]
In this work, a simple and rapid method to selectively sort semiconducting-SWCNTs (sc-SWCNTs) with large diameters using regioregular poly(3-dodecylthiophene) (rr-P3DDT) is presented. The absorption spectra and Raman spectra demonstrated that metallic species of arc discharge SWCNTs were effectively removed after interaction with rr-P3DDT in toluene with the aid of sonication and centrifugation. The sorted sc-SWCNT inks have been directly used to fabricate thin film transistors (TFTs) by dip-coating, drop-casting and inkjet printing. TFTs with an effective mobility of similar to 34 cm(2) V-1 s(-1) and on-off ratios of similar to 10(7) have been achieved by dip coating and drop casting the ink on SiO2/Si substrates with pre-patterned interdigitated gold electrode arrays. The printed devices also showed excellent electrical properties with a mobility of up to 6.6 cm(2) V-1 s(-1) and on-off ratios of up to 10(5). Printed inverters based on the TFTs have been constructed on glass substrates, showing a maximum voltage gain of 112 at a V-dd of -5 V. This work paves the way for making printable logic circuits for real applications.
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