期刊
NANOSCALE
卷 4, 期 8, 页码 2571-2574出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c2nr30133d
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资金
- National Natural Science Foundation of China [50871060, 51072006, 90921012]
- National Basic Research Program of China [2012CB932302, 2010CB832905]
The resistive switching behavior of metal-oxide-metal nanoscale devices is a fascinating phenomenon of next generation nonvolatile memories. Here, we demonstrate nanoscale memristive devices based on Zn2SnO4 nanowires (ZTO NWs) for the first time. The devices show high performance bipolar resistive switching behaviors, including an ultrafast response speed of 20 ns, a low operation voltage of <2 V and long data retention (over 5 months). A physical model of metal filament formation along the ZTO NWs has been suggested to explain the bipolar resistive switching behavior.
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