期刊
NANOSCALE
卷 4, 期 5, 页码 1486-1490出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c2nr11799a
关键词
-
类别
资金
- ERC
- NCCR
- Spanish Government [CSD2009 00013 IMAGINE, CSD2009 00050 MULTICAT]
- Spanish MICINN [MAT2010-15138 (COPEON)]
- ICREA Funding Source: Custom
Multiple seed formation by three-dimensional twinning at the initial stages of growth explains the manifold of orientations found when self-catalyzed GaAs nanowires grow on silicon. This mechanism can be tuned as a function of the growth conditions by changing the relative size between the GaAs seed and the Ga droplet. We demonstrate how growing under high V/III ratio results in a 100% yield of vertical nanowires on silicon(111). These results open up the avenue towards the efficient integration of III-V nanowire arrays on the silicon platform.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据