4.7 Article

Development of indium tin oxide thin film toluene sensor

期刊

SENSORS AND ACTUATORS B-CHEMICAL
卷 210, 期 -, 页码 165-172

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2014.11.075

关键词

Indium tin oxide (ITO); Semiconductor oxide; Volatile organic compounds (VOCs); Toluene (C7H8); Gas/vapour sensors

资金

  1. University Grants Commission (UGC), New Delhi
  2. Department of Science and Technology (DST), New Delhi
  3. Sardar Patel University

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Thin films of indium tin oxide (ITO) were deposited using thermal evaporation technique. Various sets of thin film sensors were prepared under the optimized fabrication conditions. The response of the sensors to the quantitative presence of toluene was studied. The sensing mechanism to explain the redox reactions on the surface of ITO film was developed. The films were coated with thin layers of metals and oxide to enhance the performance for the sensitive and selective detection of toluene. The response of toluene sensor in the detection range 10-1000 ppm was examined. (C) 2014 Elsevier B.V. All rights reserved.

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