期刊
NANO TODAY
卷 6, 期 1, 页码 42-60出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.nantod.2010.12.001
关键词
Graphene; Double-gated; p-n junctions; Graphene multilayers
Novel materials are in great demand for future applications. The discovery of graphene, a one atom thick carbon layer, holds the promise for unique device architectures and functionalities exploiting unprecedented physical phenomena. The ability to embed graphene materials in a double gated structure allowed on-chip realization of relativistic tunneling experiments in single layer graphene, the discovery of a gate tunable band gap in bilayer graphene and of a gate tunable band overlap in trilayer graphene. Here we discuss recent advances in the physics and nanotechnology fabrication of double gated single- and few-layer graphene devices. Crown Copyright (C) 2010 Published by Elsevier Ltd. All rights reserved.
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