期刊
NANO TODAY
卷 5, 期 4, 页码 313-336出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.nantod.2010.06.009
关键词
II-VI nanostructures; Synthesis; Doping; Optoelectronic devices
资金
- Research Grants Council of Hong Kong SAR, China [CityU5/CRF/08]
- GRF [CityU110209]
- National High Technology Research and Development Program of China [2007AA03Z301]
- National Natural Science Foundation of China [60806028, 20901021]
- National Basic Research Program of China [2006CB933000]
- Program for New Century Excellent Talents in University of the Chinese Ministry of Education [NCET-08-0764]
The distinct properties of II-VI nanostructures have opened new opportunities for the applications of II-VI semiconductor materials in electronics and optoelectronics. Herein, we present a comprehensive review on the recent advances in the synthesis, properties and optoelectronic applications of one-dimensional II-VI nanostructures. In particular, the approaches to manipulate the electronic, optoelectronic, and transport properties of II-VI nanostructures by controlled doping and the latest progresses in fabricating high-performance II-VI nanoelectronic and nano-optoelectronic devices are discussed. (C) 2010 Elsevier Ltd. All rights reserved.
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