期刊
NANO RESEARCH
卷 12, 期 1, 页码 149-157出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-018-2194-6
关键词
graphene; rhenium selenide; chemical vapor deposition; scanning tunneling microscopy; two-dimensional (2D) heterostructure
类别
资金
- National Natural Science Foundation of China [51472008, 51861135201, 51290272, 61774003, 51502007, 51672007]
- National Key Research and Development Program of China [2016YFA0200103, 2017YFA0205700, 2017YFA0304600]
- Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics [KF201601, KF201604]
- 2011 Program Peking-Tsinghua-IOP Collaborative Innovation Center of Quantum Matter
- Youth 1000-Talent Program of China
- Shenzhen Basic Research Project [JCYJ20170407155608882]
Vertical heterostructures based on two-dimensional (2D) materials have attracted widespread interest for their numerous applications in electronic and optoelectronic devices. Herein, we report the direct construction of an abnormal graphene/ReSe2 stack on Au foils by a two-step chemical vapor deposition (CVD) strategy. During the second growth stage, monolayer ReSe2 is found to preferentially evolve at the interface between the first-grown graphene layer and the Au substrate. The unusual stacking behavior is unraveled by in-situ cutting open the upper graphene from the defects to expose the lower ReSe2 using scanning tunneling microscopy (STM). From combination of these results with density functional theory calculations, the domain boundaries and edge sites of graphene are proposed to be adsorption sites for Re and Se precursors, further facilitating the growth of ReSe2 at the van der Waals gap of graphene/Au. This work hereby offers an intriguing strategy for obtaining vertical 2D heterostructures featured with an ultra-clean interface and a designed stacking geometry.
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