期刊
NANO RESEARCH
卷 7, 期 11, 页码 1623-1630出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-014-0522-z
关键词
single-walled carbon nanotubes; electronic transport; dielectric force microscopy; field-effect transistor; carrier density; carrier mobility
类别
资金
- National Natural Science Foundation of China [91233104, 61376063]
- National Basic Research Program of China [2010CB934700]
- Jiangsu Provincial Natural Science Foundation [BK20130006]
Intrinsic carrier transport properties of single-walled carbon nanotubes have been probed by two parallel methods on the same individual tubes: The contactless dielectric force microscopy (DFM) technique and the conventional field-effect transistor (FET) method. The dielectric responses of SWNTs are strongly correlated with electronic transport of the corresponding FETs. The DC bias voltage in DFM plays a role analogous to the gate voltage in FET. A microscopic model based on the general continuity equation and numerical simulation is built to reveal the link between intrinsic properties such as carrier concentration and mobility and the macroscopic observable, i.e. dielectric responses, in DFM experiments. Local transport barriers in nanotubes, which influence the device transport behaviors, are also detected with nanometer scale resolution.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据