期刊
NANO RESEARCH
卷 7, 期 10, 页码 1449-1456出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-014-0504-1
关键词
graphene; all-graphene devices; thinning; contact resistance
类别
资金
- National Basic Research Program of China (973 Program) [2013CB934500, 2013CBA01600]
- National Natural Science Foundation of China (NSFC) [61325021, 91223204, 11174333, 11204358]
- Chinese Academy of Sciences
All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. The as-fabricated graphene is free of contamination and retains the quality of pristine graphene. The contact resistance at room temperature (RT) between a bilayer graphene channel and a multilayer graphene electrode can be as low as similar to 5 Omega center dot mu m, the lowest ever achieved experimentally. Our results suggest the feasibility of employing such all-graphene devices in high performance carbon-based integrated circuits.
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