期刊
NANO RESEARCH
卷 7, 期 7, 页码 1083-1091出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-014-0471-6
关键词
piezotronic effect; humidity sensor; ZnO micro/nanowire; Schottky contact
类别
资金
- Thousands Talents Program for Pioneer Researchers and Innovative Teams, China
- Knowledge Innovation Program of the Chinese Academy of Sciences [KJCX2-YW-M13]
- Chinese Academy of Sciences
A ZnO micro/nanowire has been utilized to fabricate Schottky-contacted humidity sensors based on a metal-semiconductor-metal (M-S-M) structure. By means of the piezotronic effect, the signal level, sensitivity and sensing resolution of the humidity sensor were significantly enhanced when applying an external strain. Since a higher Schottky barrier markedly reduces the signal level, while a lower Schottky barrier decreases the sensor sensitivity due to increased ohmic transport, a 0.22% compressive strain was found to optimize the performance of the humidity sensor, with the largest responsivity being 1,240%. The physical mechanism behind the observed mechanical-electrical behavior was carefully studied by using band structure diagrams. This work provides a promising way to significantly enhance the overall performance of a Schottky-contact structured micro/nanowire sensor.
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