期刊
NANO RESEARCH
卷 6, 期 6, 页码 399-408出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-013-0317-7
关键词
graphene; SiC; intercalation; doping; STM
类别
资金
- National Natural Science Foundation of China [21222305, 21073183, 21033009]
- Ministry of Science and Technology of China [2011CB932704, 2013CB834603]
- China Postdoctoral Science Foundation [20110491548]
Surface functionalization of epitaxial graphene overlayers on 6H-SiC(0001) has been attempted through thermal reactions in NH3. X-ray photoelectron spectroscopy and micro-region low energy electron diffraction results show that a significant amount of N is present at the NH3-treated graphene surface, which results in strong band bending at the SiC surface as well as decoupling of the graphene overlayers from the substrate. The majority of the surface N species can be removed by annealing in vacuum up to 850 A degrees C, weakening the surface band bending and resuming the strong coupling of graphene with the SiC surface. The desorbed N atoms can be attributed to the intercalated species between graphene and SiC. Low temperature scanning tunneling spectroscopy and density functional theory simulations confirm the presence of N dopants in the graphene lattice, which are in the form of graphitic substitution and can be stable above 850 A degrees C. This is the first report of simultaneous N intercalation and N doping of epitaxial graphene overlayers on SiC, and it may be employed to alter the surface physical and chemical properties of epitaxial graphene overlayers.
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