期刊
NANO RESEARCH
卷 5, 期 7, 页码 470-476出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-012-0232-3
关键词
Nanowires; GaAs; heterostructure; polytypism; metal-organic vapor phase epitaxy (MOVPE)-growth
类别
资金
- German Academic Exchange Service (DAAD)
- Nanometer Structure Consortium at Lund University (nmC@LU)
- Swedish Research Council (VR)
- Swedish Foundation for Strategic Research (SSF)
- Knut and Alice Wallenberg Foundation (KAW)
We have prepared GaAs wurtzite (WZ)-zinc blende (ZB) nanowire heterostructures by Au particle-assisted metal-organic vapor phase epitaxy (MOVPE) growth. Superior crystal quality of both the transition region between WZ and ZB and of the individual segments themselves was found for WZ-ZB single heterostructures. Pure crystal phases were achieved and the ZB segments were found to be free of any stacking defects, whereas the WZ sections showed a maximum stacking fault density of 20 mu m(-1). The hexagonal cross-sectional wires are terminated by -type side facets for the WZ segment and predominantly {110}-type side facets for the ZB part of the wire. A diameter increase occurred after the transition from WZ to ZB. Additionally, facets of the -type as well as downwards-directed overgrowth of the WZ segments were formed at the WZ to ZB transition to compensate for the observed diameter increase and facet rotation. In the case of WZ-ZB multiple heterostructures, we observed slightly higher densities of stacking faults and twin planes compared to single heterostructures.
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