期刊
NANO RESEARCH
卷 5, 期 10, 页码 739-746出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-012-0260-z
关键词
Topological insulator; Bi2Se3 film; transport property; magnetoresistance; low temperature
类别
资金
- Penn State Materials Research Science and Engineering Center (MRSEC) under National Science Foundation (NSF) [DMR-0820404]
- National Basic Research Program (NBRP) of China [2012CB921300]
- National Natural Science Foundation of China [11174007, 91021006]
- Research Grant Council of Hong Kong Special Administrative Region [HKU 7061/10P]
- (China) National Science Foundation
- Ministry of Science and Technology of China
Topological insulators are insulating in the bulk but possess spin-momentum locked metallic surface states protected by time-reversal symmetry. The existence of these surface states has been confirmed by angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). Detecting these surface states by transport measurements, which might at first appear to be the most direct avenue, was shown to be much more challenging than expected. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films. Interestingly, measurements under an in-plane magnetic field, along and perpendicular to the bias current show anomalous opposite magnetoresistance.
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