4.8 Article

Strain-induced D band observed in carbon nanotubes

期刊

NANO RESEARCH
卷 5, 期 12, 页码 854-862

出版社

TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-012-0269-3

关键词

SWCNTs; Raman; D band; defects; strain; sp(2) bond

资金

  1. Department of Energy (DOE) [DE-FG02-07ER46376]
  2. Office of Naval Research (ONR) [N000141010511]
  3. U.S. Department of Energy (DOE) [DE-FG02-07ER46376] Funding Source: U.S. Department of Energy (DOE)

向作者/读者索取更多资源

We report the emergence of the D band Raman mode in single-walled carbon nanotubes under large axial strain. The D to G mode Raman intensity ratio (I (D)/I (G)) is observed to increase with strain quadratically by more than a factor of 100-fold. Up to 5% strain, all changes in the Raman spectra are reversible. The emergence of the D band, instead, arises from the reversible and elastic symmetry-lowering of the sp(2) bonds structure. Beyond 5%, we observe irreversible changes in the Raman spectra due to slippage of the nanotube from the underlying substrate, however, the D band intensity resumes its original pre-strain intensity, indicating that no permanent defects are formed.

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