期刊
NANO RESEARCH
卷 5, 期 4, 页码 258-264出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-012-0205-6
关键词
Graphene; epitaxial growth; remote plasma-enhanced chemical vapor deposition (RPECVD); highly ordered pyrolytic graphite (HOPG); SiC; transfer; mobility
类别
资金
- CAS
- National 973 Project of China [2012CB921302]
- National Science Foundation of China (NSFC) [11174333, 11074288, 10974226]
We report an epitaxial growth of graphene, including homo- and hetero-epitaxy on graphite and SiC substrates, at a temperature as low as similar to 540 A degrees C. This vapour-phase epitaxial growth, carried out in a remote plasma-enhanced chemical vapor deposition (RPECVD) system using methane as the carbon source, can yield large-area high-quality graphene with the desired number of layers over the entire substrate surfaces following an AB-stacking layer-by-layer growth model. We also developed a facile transfer method to transfer a typical continuous one layer epitaxial graphene with second layer graphene islands on top of the first layer with the coverage of the second layer graphene islands being 20% (1.2 layer epitaxial graphene) from a SiC substrate onto SiO2 and measured the resistivity, carrier density and mobility. Our work provides a new strategy toward the growth of graphene and broadens its prospects of application in future electronics.
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