期刊
NANO RESEARCH
卷 4, 期 12, 页码 1208-1214出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-011-0171-4
关键词
Graphene; iron foil; chemical vapor deposition (CVD) method; Raman spectroscopy; field-effect transistor (FET)
类别
资金
- National Natural Science Foundation of China [60736004, 20973184, 20825208, 60911130231]
- Major State Basic Research Development Program [2011CB808403, 2011CB932303, 2009CB623603, 2011CB932700]
- Chinese Academy of Sciences
We demonstrate a simple and controllable way to synthesize large-area, few-layer graphene on iron substrates by an optimized chemical vapor deposition (CVD) method using a mixture of methane and hydrogen. Based on an analysis of the Fe-C phase diagram, a suitable procedure for the successful synthesis of graphene on Fe surfaces was designed. An appropriate temperature and cooling process were found to be very important in the synthesis of highly crystalline few-layer graphene. Graphene-based field-effect transistor (FET) devices were fabricated using the resulting few-layer graphene, and showed good quality with extracted mobilities of 300-1150 cm(2)/(V center dot s).
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