期刊
NANO RESEARCH
卷 4, 期 5, 页码 440-447出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-011-0100-6
关键词
Graphene; ZnO; nanorod; heterojunction; selective growth; solution
类别
资金
- Ministry of Education, Science and Technology [2010-0015035, 2009-0077682]
- Korea government Ministry of Knowledge Economy [2009T100100614]
- National Research Foundation of Korea [2009-0077682] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A promising strategy for the selective growth of ZnO nanorods on SiO2/Si substrates using a graphene buffer layer in a low temperature solution process is described. High densities of ZnO nanorods were grown over a large area and most ZnO nanorods were vertically well-aligned on graphene. Furthermore, selective growth of ZnO nanorods on graphene was realized by applying a simple mechanical treatment, since ZnO nanorods formed on graphene are mechanically stable on an atomic level. These results were confirmed by first principles calculations which showed that the ZnO-graphene binding has a low destabilization energy. In addition, it was found that ZnO nanorods grown on SiO2/Si with a graphene buffer layer have better optical properties than ZnO nanorods grown on bare SiO2/Si. The nanostructured ZnO-graphene materials have promising applications in future flexible electronic and optical devices.
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