期刊
NANO RESEARCH
卷 4, 期 6, 页码 531-540出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-011-0109-x
关键词
Single layer graphene; amorphous carbon; epitaxial metal; annealing
类别
资金
- MEXT
- JSPS
- Global Center of Excellence (GCOE)
- Grants-in-Aid for Scientific Research [22310060] Funding Source: KAKEN
The synthesis of large area, homogenous, single layer graphene on cobalt (Co) and nickel (Ni) is reported. The process involves vacuum annealing of sputtered amorphous carbon (a-C) deposited on Co/sapphire or Ni/sapphire substrates. The improved crystallinity of the metal film, assisted by the sapphire substrate, proves to be the key to the quality of as-grown graphene film. The crystallinity of the Co and Ni metal films was improved by sputtering the metal at elevated temperature as was verified by X-ray diffraction (XRD). After sputtering of a-C and annealing, large area, single layer graphene that occupies almost the entire area of the substrate was produced. With this method, 100 mm(2)-area single layer graphene can be synthesized and is limited only by the substrate and vacuum chamber size. The homogeneity of the graphene film is not dependent on the cooling rate, in contrast to syntheses using polycrystalline metal films and conventional chemical vapor deposition (CVD) growth. Our facile method of producing single layer graphene on Co and Ni metal films should lead to large scale graphene-based applications.
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