期刊
NANO RESEARCH
卷 3, 期 7, 页码 528-536出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-010-0013-9
关键词
Nanowire; nanocolumn; molecular beam epitaxy (MBE); photoluminescence; stacking faults; catalyst
类别
资金
- EU [015783]
- Marie Curie RTN PARSEM [MRTN-CT-2004-005583]
GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds. Under identical growth conditions of temperature and V/III ratio, both types of GaN nanowires are of wurtzite structure elongated in the Ga-polar direction and are constricted by M-plane facets. However, the catalyst-induced nanowires contain many more basal-plane stacking faults and their photoluminescence is weaker. These differences can be explained as effects of the catalyst Ni seeds.
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