期刊
NANO RESEARCH
卷 3, 期 1, 页码 8-15出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-010-1002-8
关键词
graphene nanoribbon (GNR); multilayer graphene; new channel material; field-effect transistor; carbon nanotube (CNT)
类别
资金
- National Science Foundation (NSF)
- Office of Naval Research (ONR)
- Intel
- MARCO MSD
The performance limits of a multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared with those of a monolayer GNRFET and a carbon nanotube (CNT) FET. The results show that with a thin high dielectric constant (high-kappa)gate insulator and reduced interlayer coupling, a multilayer GNRFET can significantly outperform its CNT counterpart with a similar gate and bandgap in terms of the ballistic on-current. In the presence of optical phonon scattering, which has a short mean free path in the graphene-derived nanostructures, the advantage of the multilayer GNRFET is even more significant. Simulation results indicate that multilayer GNRs with incommensurate non-AB stacking and weak interlayer coupling are the best candidates for high-performance GNRFETs.
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