期刊
NANO RESEARCH
卷 2, 期 2, 页码 167-175出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-009-9013-z
关键词
Nanonet; Carbon nanotube; flexible electronics; thin film transistors
类别
资金
- National Science Foundation [NIRT-0403489]
- Department of Energy [DE-FG02-07ER46471]
- Motorola, Inc.
- Frederick-Seitz Materials Research Laboratory
- Center for Microanalysis of Materials at the University of Illinois [DE-FG02-07ER46471, DE-FG02-07ER46453]
A new technique to reduce the influence of metallic carbon nanotubes (CNTs) relevant for large-scale integrated circuits based on CNT-nanonet transistors is proposed and verified. Historically, electrical and chemical filtering of the metallic CNTs have been used to improve the ON/OFF ratio of CNT-nanonet transistors; however, the corresponding degradation in ON-current has made these techniques somewhat unsatisfactory. Here, we abandon the classical approaches in favor of a new approach based on relocation of asymmetric percolation threshold of CNT-nanonet transistors by a technique called striping; this allows fabrication of transistors with ON/OFF ratio >1000 and ON-current degradation no more than a factor of 2. We offer first principle numerical models, experimental confirmation, and renormalization arguments to provide a broad theoretical and experimental foundation of the proposed method.
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