期刊
NANO LETTERS
卷 14, 期 3, 页码 1578-1582出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl404826r
关键词
Graphene; terahertz; hot carrier; pump-probe
类别
资金
- Office of Basic Energy Science, Department of Energy [DE-SC0003949, DE-AC02-05CH11231]
- Office of Naval Research [N00014-13-1-0464, MURI N00014-09-1-1066]
- David and Lucile Packard fellowship
We investigate the ultrafast terahertz response of electrostatically gated graphene upon optical excitation. We observe that the photoinduced terahertz absorption increases in charge neutral graphene but decreases in highly doped graphene. We show that this transition from semiconductor-like to metal-like response is unique for zero bandgap materials such as graphene. In charge neutral graphene photoexcited hot carriers effectively increase electron and hole densities and increase the conductivity. In highly doped graphene, however, photoexcitation does not change net conducting carrier concentration. Instead, it mainly increases electron scattering rate and reduce the conductivity.
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