期刊
NANO LETTERS
卷 14, 期 2, 页码 578-584出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl403748x
关键词
Silicon nanowires; PET; liquid gate; gate coupling; noise spectroscopy; signal-to-noise ratio
类别
资金
- German Academic Exchange Service (DAAD)
- China Scholarship Council
We employ noise spectroscopy and transconductance measurements to establish the optimal regimes of operation for our fabricated silicon nanowire field-effect transistors (Si NW FETs) sensors. A strong coupling between the liquid gate and back gate (the substrate) has been revealed and used for optimization of signal-to-noise ratio in subthreshold as well as above-threshold regimes. Increasing the sensitivity of Si NW FET sensors above the detection limit has been predicted and proven by direct experimental measurements.
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