期刊
NANO LETTERS
卷 15, 期 1, 页码 486-491出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl5038177
关键词
Molybdenum disulfide; tungsten disulfide; van der Waals epitaxy; interlayer charge transfer; two-dimensional heterojunction
类别
资金
- Army Research Office [W911NF-13-1-0201]
- National Science Foundation [DMR 1352028]
- FAME (one of six centers of STARnet, a SRC program - MARCO)
- DARPA
- Bissell Distinguished Professorship
- Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy
- Direct For Mathematical & Physical Scien [1352028] Funding Source: National Science Foundation
Semiconductor heterostructures provide a powerful platform to engineer the dynamics of excitons for fundamental and applied interests. However, the functionality of conventional semiconductor heterostructures is often limited by inefficient charge transfer across interfaces due to the interfacial imperfection caused by lattice mismatch. Here we demonstrate that MoS2/WS2 heterostructures consisting of monolayer MoS2 and WS2 stacked in the vertical direction can enable equally efficient interlayer exciton relaxation regardless the epitaxy and orientation of the stacking. This is manifested by a similar 2 orders of magnitude decrease of photoluminescence intensity in both epitaxial and nonepitaxial MoS2/WS2 heterostructures. Both heterostructures also show similarly improved absorption beyond the simple superimposition of the absorptions of monolayer MoS2 and WS2. Our result indicates that 2D heterostructures bear significant implications for the development of photonic devices, in particular those requesting efficient exciton separation and strong light absorption, such as solar cells, photodetectors, modulators, and photocatalysts. It also suggests that the simple stacking of dissimilar 2D materials with random orientations is a viable strategy to fabricate complex functional 2D heterostructures, which would show similar optical functionality as the counterpart with perfect epitaxy.
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