4.8 Article

Far-Field Emission Patterns of Nanowire Light-Emitting Diodes

期刊

NANO LETTERS
卷 14, 期 6, 页码 3653-3660

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl501438r

关键词

nanowire; metal-organic vapor phase epitaxy; light-emitting diode; far-field pattern

资金

  1. Ministry of Education, Culture, Sports, Science, and Technology, Japan

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We investigated far-field (FF) emission patterns of nanowire light-emitting diodes (NW-LEDs). NW-LEDs were fabricated using vertical InP-NW arrays with axial pn-junctions grown on InP (111)A substrates, and the emission intensity of NW-LEDs was measured as a function of view angle theta, where theta = 0 degrees indicates the direction normal to the substrate or that along the NWs. For NW arrays with pitch a of around 1 mu m, we found a clear dip in the emission intensity at theta = 0 degrees, which was explained by an analogy with dipole antenna, or a smaller contribution of the lowest order guided modes for emission as compared with higher order guided and free-space radiation modes. Results of the simulation of radiation patterns by the finite-difference time-domain method and near-field to far-field transformation are also described. They also confirm that the dip at 6 = 00 is specific to light emission from NWs. We also investigated the dependence of the FF pattern on the pitch of the NW array, and the observation was qualitatively explained by the relative contribution of the guided and free-space radiation modes.

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