期刊
NANO LETTERS
卷 14, 期 10, 页码 5948-5952出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl5029655
关键词
Quantum dots; field-effect transistor; cadmium selenide; delocalization; magnetoresistance; mobility edge
类别
资金
- U.S. Department of Energy Office of Basic Energy Sciences, Division of Materials Science and Engineering [DE-SC0002158]
We study gate-controlled, low-temperature resistance and magnetotransport in indium-doped CdSe quantum dot field effect transistors. We show that using the gate to accumulate electrons in the quantum dot channel increases the localization product (localization length times dielectric constant) describing transport at the Fermi level, as expected for Fermi level changes near a mobility edge. Our measurements suggest that the localization length increases to significantly greater than the quantum dot diameter.
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