4.8 Article

Profiling Nanowire Thermal Resistance with a Spatial Resolution of Nanometers

期刊

NANO LETTERS
卷 14, 期 2, 页码 806-812

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl4041516

关键词

Thermal conductance; nanowires; nanostructures; thermal measurement; electron beam heating; nanoscale thermal transport

资金

  1. Ministry of Education, Singapore [MOE2011-T2-1-052]
  2. NUS [R-144-000-284-646, R-263-000-626-646]
  3. NSF China [11334007]

向作者/读者索取更多资源

We report a new technique to profile the thermal resistance along a nanowire with a spatial resolution of better than 20 nm. Using this technique, we mapped the thermal conductivity along a Si0.7Ge0.3/NiSi0.7Ge0.3 hetero-structured nanowire. We also measured the interfacial thermal resistance (ITR) across the Si/NiSi2 interface embedded in Si/NiSi2 heterostructured nanowires. The ITR does not change even for adjacent interfaces as close as similar to 50 atomic layers.

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