期刊
NANO LETTERS
卷 14, 期 2, 页码 806-812出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl4041516
关键词
Thermal conductance; nanowires; nanostructures; thermal measurement; electron beam heating; nanoscale thermal transport
类别
资金
- Ministry of Education, Singapore [MOE2011-T2-1-052]
- NUS [R-144-000-284-646, R-263-000-626-646]
- NSF China [11334007]
We report a new technique to profile the thermal resistance along a nanowire with a spatial resolution of better than 20 nm. Using this technique, we mapped the thermal conductivity along a Si0.7Ge0.3/NiSi0.7Ge0.3 hetero-structured nanowire. We also measured the interfacial thermal resistance (ITR) across the Si/NiSi2 interface embedded in Si/NiSi2 heterostructured nanowires. The ITR does not change even for adjacent interfaces as close as similar to 50 atomic layers.
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