4.8 Article

Anomalous Capacitive Behaviors of Graphene Oxide Based Solid-State Supercapacitors

期刊

NANO LETTERS
卷 14, 期 4, 页码 1938-1943

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl4047784

关键词

Graphene oxide; solid-state microcapacitors; laser reduction; diffusion-less; classical molecular dynamic method

资金

  1. U.S. [NSF-0926093, NSF-1138182, NSF-1067960]
  2. State Key Laboratory of Solidification Processing (NWPU), China [83-TZ-2013]
  3. AFOSR [MURI-FA9550-12-1-0035]
  4. Div Of Civil, Mechanical, & Manufact Inn
  5. Directorate For Engineering [1067960] Funding Source: National Science Foundation
  6. Div Of Engineering Education and Centers
  7. Directorate For Engineering [1138182] Funding Source: National Science Foundation

向作者/读者索取更多资源

Substantial differences in charge storage mechanisms exist between dielectric capacitors (DCs) and electrochemical capacitors (ECs), resulting in orders of magnitude difference of stored charge density in them. However, if ionic diffusion, the major charge transport mechanism in ECs, is confined within nanoscale dimensions, the Helmholtz layers and diffusion layers will overlap, resulting in dismissible ionic diffusion. An interesting contradiction between appreciable energy density and unrecognizable ionic diffusion is observed in solid-state capacitors made from reduced graphene oxide films that challenge the fundamental charge storage mechanisms proposed in such devices. A new capacitive model is proposed, which combines the two distinct charge storage mechanisms of DCs and ECs, to explain the contradiction, of high storage capacity yet undetectable ionic diffusion, seen in graphene oxide based supercapacitors.

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