期刊
NANO LETTERS
卷 14, 期 4, 页码 2094-2098出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl500299h
关键词
Silicon nanowire; silicon single electron transistor; edge state; quantum dot; valley splitting
类别
资金
- EU through FP7MINECC initiative under Project TOLOP [318397]
- ERC Starting Grant HybridNano
- French ANR under Project SIMPSSON [2010-Blan-1015]
We investigate the gate-induced onset of few-electron regime through the undoped channel of a silicon nanowire field-effect transistor. By combining low-temperature transport measurements and self-consistent calculations, we reveal the formation of one-dimensional conduction modes localized at the two upper edges of the channel. Charge traps in the gate dielectric cause electron localization along these edge modes, creating elongated quantum dots with characteristic lengths of similar to 10 nm. We observe single-electron tunneling across two such dots in parallel, specifically one in each channel edge. We identify the filling of these quantum dots with the first few electrons, measuring addition energies of a few tens of millielectron volts and level spacings of the order of 1 meV, which we ascribe to the valley orbit splitting. The total removal of valley degeneracy leaves only a 2-fold spin degeneracy, making edge quantum dots potentially promising candidates for silicon spin qubits.
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