期刊
NANO LETTERS
卷 15, 期 1, 页码 428-433出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl503756y
关键词
Bilayer graphene; hexagonal boron nitride; heterostructure; resonant tunneling; negative differential resistance; tunneling field-effect transistor
类别
资金
- NRI-SWAN
- ONR
- Intel
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer currentvoltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据