期刊
NANO LETTERS
卷 14, 期 11, 页码 6382-6386出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl502854w
关键词
Graphene; grain boundaries; scanning tunneling microscopy; scanning tunneling sepctroscopy; density functional theory
类别
资金
- Institut Universitaire de France
- Labex SEAM Program [ANR-11-LABX-086, ANR-11-IDEX-0005-02]
- Swiss National Science Foundation [PP002P_133552]
- Swiss National Supercomputing Centre (CSCS) [s443, s515]
Grain boundaries in epitaxial graphene on the SiC(000 (1) over bar) substrate are studied using scanning tunneling microscopy and spectroscopy. All investigated small-angle grain boundaries show pronounced out-of-plane buckling induced by the strain fields of constituent dislocations. The ensemble of observations determines the critical misorientation angle of buckling transition theta(c) = 19 +/- 2 degrees. Periodic structures are found among the flat large-angle grain boundaries. In particular, the observed theta = 33 +/- 2 degrees highly ordered grain boundary is assigned to the previously proposed lowest formation energy structural motif composed of a continuous chain of edge-sharing alternating pentagons and heptagons. This periodic grain boundary defect is predicted to exhibit strong valley filtering of charge carriers thus promising the practical realization of all-electric valleytronic devices.
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