期刊
NANO LETTERS
卷 14, 期 8, 页码 4360-4367出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl501249q
关键词
Quantized conductance; nanofilament; multilevel resistive switching; valence change memory; titanium dioxide; single-crystal
类别
资金
- National Science Foundation [DMR-1006725, DMR-1207342]
- Office of Naval Research [N00014-10-10489]
- Judson S. Swearingen Regents Chair in Engineering at The University of Texas at Austin
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1207342] Funding Source: National Science Foundation
TiO2 is being widely explored as an active resistive switching (RS) material for resistive random access memory. We report a detailed analysis of the RS characteristics of single-crystal anatase-TiO2 thin films epitaxially grown on silicon by atomic layer deposition. We demonstrate that although the valence change mechanism is responsible for the observed RS, single-crystal anatase-TiO2 thin films show electrical characteristics that are very different from the usual switching behaviors observed for polycrystalline or amorphous TiO2 and instead very similar to those found in electrochemical metallization memory. In addition, we demonstrate highly stable and reproducible quantized conductance that is well controlled by application of a compliance current and that suggests the localized formation of conducting Magneli-like nanophases. The quantized conductance observed results in multiple well-defined resistance states suitable for implementation of multilevel memory cells.
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