期刊
NANO LETTERS
卷 14, 期 5, 页码 2837-2842出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl500842y
关键词
XPS; graphene transistor; gate tunable; binding energy shifts; gate dielectric; 2D crystals
类别
资金
- Scientific and Technological Research Council of Turkey (TUBITAK) [112T686, 113F278, 212M051]
- Marie Curie International Reintegration Grant (IRG) [256458]
In this Letter, we report gate-tunable X-ray photoelectron emission from back-gated graphene transistors. The back-gated transistor geometry allows us to study photoemission from graphene layer and the dielectric substrate at various gate voltages. Application of gate voltage electrostatically dopes graphene and shifts the binding energy of photoelectrons in various ways depending on the origin and the generation mechanism(s) of the emitted electrons. The gate-induced shift of the Fermi energy of graphene alters the binding energy of the C 1s electrons, whereas the electric field of the gate electrodes shift the binding energy of core electrons emitted from the gate dielectric underneath the graphene layer. The gradual change of the local potential through depths of the gate dielectric provides quantitative electrical information about buried interfaces. Our results suggest that gate-tunable photoemission spectra with chemically specific information linked with local electrical properties opens new routes to elucidating operation of devices based especially on layered materials.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据