4.8 Article

Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene

期刊

NANO LETTERS
卷 14, 期 6, 页码 3369-3373

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl5008757

关键词

SiC epitaxial graphene; quantum hall effect; scanning gate microscopy; monolayer and bilayer graphene; resistance metrology; quantum point contact

资金

  1. European Commission ICT STREP ConceptGraphene
  2. FET Graphene Flagship
  3. ERC Synergy Grant Hetero2D
  4. EMRP Graph Ohm
  5. Swedish SSF
  6. Knut and Alice Wallenberg Foundation
  7. Linneqs Center for Engineered Quantum Systems
  8. Chalmers Areas of Advance
  9. EPSRC
  10. Engineering and Physical Sciences Research Council [EP/I029575/1, EP/G035954/1] Funding Source: researchfish
  11. EPSRC [EP/G035954/1, EP/I029575/1] Funding Source: UKRI

向作者/读者索取更多资源

We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据