期刊
NANO LETTERS
卷 14, 期 6, 页码 3369-3373出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl5008757
关键词
SiC epitaxial graphene; quantum hall effect; scanning gate microscopy; monolayer and bilayer graphene; resistance metrology; quantum point contact
类别
资金
- European Commission ICT STREP ConceptGraphene
- FET Graphene Flagship
- ERC Synergy Grant Hetero2D
- EMRP Graph Ohm
- Swedish SSF
- Knut and Alice Wallenberg Foundation
- Linneqs Center for Engineered Quantum Systems
- Chalmers Areas of Advance
- EPSRC
- Engineering and Physical Sciences Research Council [EP/I029575/1, EP/G035954/1] Funding Source: researchfish
- EPSRC [EP/G035954/1, EP/I029575/1] Funding Source: UKRI
We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.
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